二硒化錫晶體 SnSe2 （Tin Selenide）晶體尺寸：~8毫米電學性能：半導體晶體結構：六邊形晶胞參數(shù)：a = b = 0.381, c = 0.614 nm, α = β = 90#176;, γ = 120#176;晶體類型：合成晶體純度：＞99.995%

二硒化錫晶體 SnSe2 (Tin Selenide)
晶體尺寸：~8毫米
電學性能：半導體
晶體結構：六邊形
晶胞參數(shù)：a = b = 0.381, c = 0.614 nm, α = β = 90°, γ = 120°
晶體類型：合成
晶體純度：＞99.995%

X-ray diffraction on a SnSe2 single crystal aligned along the (001) plane. XRD diffraction was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 1, 2, 3, 4, 5

Powder X-ray diffraction (XRD) of a single crystal SnSe2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal SnSe2 by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal SnSe2. Measurement was performed with a 785 nm Raman system at room temperature.